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SIGC25T60NCX1SA5

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SIGC25T60NCX1SA5

IGBT 3 CHIP 600V WAFER

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies' SIGC25T60NCX1SA5 is a 600V NPT IGBT die designed for high-performance power switching applications. This component features a 30A continuous collector current (Ic) and a 90A pulsed collector current (Icm), with a low on-state voltage (Vce(on)) of 2.5V at 15V gate drive and 30A collector current. The device exhibits typical switching times of 21ns turn-on and 110ns turn-off, tested under 300V, 30A, 8.2 Ohm, and 15V conditions. Operating across a wide temperature range of -55°C to 150°C (TJ), this die-level IGBT is suitable for demanding environments in industrial and automotive sectors. The SIGC25T60NCX1SA5 is supplied in bulk packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseDie
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 30A
Supplier Device PackageDie
IGBT TypeNPT
Td (on/off) @ 25°C21ns/110ns
Switching Energy-
Test Condition300V, 30A, 8.2Ohm, 15V
Current - Collector (Ic) (Max)30 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)90 A

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