SIGC25T60NCX1SA2
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC25T60NCX1SA2 is an NPT IGBT die designed for high-performance power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current of 30A, with a pulsed capability of 90A. The Vce(on) is specified at a maximum of 2.5V at 15V gate-emitter voltage and 30A collector current, tested under 300V, 30A, 8.2 Ohm, and 15V conditions. Turn-on and turn-off times are 21ns and 110ns respectively at 25°C. Operating across a temperature range of -55°C to 150°C, this die is suitable for surface mount integration. Its robust construction makes it ideal for use in industrial power supplies, motor control, and automotive applications. The SIGC25T60NCX1SA2 is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 30A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 21ns/110ns |
| Switching Energy | - |
| Test Condition | 300V, 30A, 8.2Ohm, 15V |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 90 A |
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