SIGC18T60UNX1SA2
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies' SIGC18T60UNX1SA2 is a 600V NPT IGBT die designed for high-performance power switching applications. This component features a 20A continuous collector current (Ic) with a pulsed capability of 60A (Icm). The Vce(on) is rated at a maximum of 3.15V at 15V gate-emitter voltage and 20A collector current, with typical switching times of 15ns turn-on and 65ns turn-off under the specified test conditions. Operating across a wide temperature range of -55°C to 150°C (TJ), this die is suitable for demanding environments. Its surface mount die package is ideal for integration into advanced power modules and systems, commonly found in industrial motor drives, power supplies, and renewable energy inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.15V @ 15V, 20A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 15ns/65ns |
| Switching Energy | - |
| Test Condition | 400V, 20A, 2.2Ohm, 15V |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
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