SIGC18T60UNX1SA1
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC18T60UNX1SA1 is a high-performance NPT IGBT die designed for demanding applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current capability of 20A, with a pulsed capability of 60A (Icm) under specific test conditions (400V, 20A, 2.2Ohm, 15V). The Vce(on) is rated at a maximum of 3.15V at 15V gate drive and 20A collector current. It features standard input type and a surface mount die package. Operating across a wide temperature range of -55°C to 150°C (TJ), this IGBT die is suitable for applications in industrial motor control, power supplies, and renewable energy systems. Typical switching times are 15ns for turn-on (Td(on)) and 65ns for turn-off (Td(off)) at 25°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.15V @ 15V, 20A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 15ns/65ns |
| Switching Energy | - |
| Test Condition | 400V, 20A, 2.2Ohm, 15V |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
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