SIGC18T60SNCX7SA2
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC18T60SNCX7SA2 is an NPT IGBT die designed for high-performance power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 20A, with a pulsed capability of up to 60A. The Vce(on) is specified at a maximum of 2.5V at 15V gate-emitter voltage and 20A collector current, under test conditions of 400V and 16 Ohm.
The device exhibits typical turn-on and turn-off delays of 36ns and 250ns respectively at 25°C. Operating across a wide temperature range of -55°C to 150°C (TJ), this surface mount die is suitable for demanding environments. The SIGC18T60SNCX7SA2 finds application in industrial motor drives, power supplies, and renewable energy systems. It is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 36ns/250ns |
| Switching Energy | - |
| Test Condition | 400V, 20A, 16Ohm, 15V |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
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