SIGC18T60SNCX7SA1
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC18T60SNCX7SA1 is an NPT IGBT die designed for demanding applications. This component offers a 600V collector-emitter breakdown voltage with a continuous collector current rating of 20A, and a pulsed capability of 60A. The Vce(on) is specified at a maximum of 2.5V at 15V gate-emitter voltage and 20A collector current, with typical turn-on and turn-off times of 36ns and 250ns respectively, tested under 400V, 20A, 16 Ohm, and 15V conditions. Operating across a temperature range of -55°C to 150°C (TJ), this bare die is supplied in bulk packaging. It finds utility in power factor correction, uninterruptible power supplies (UPS), and industrial motor drives.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 36ns/250ns |
| Switching Energy | - |
| Test Condition | 400V, 20A, 16Ohm, 15V |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
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