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SIGC18T60SNCX1SA4

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SIGC18T60SNCX1SA4

IGBT 3 CHIP 600V WAFER

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies SIGC18T60SNCX1SA4 is an NPT IGBT die designed for demanding applications. This component features a 600V collector-emitter breakdown voltage and a maximum continuous collector current of 20A, with a pulsed capability of 60A. The Vce(on) is rated at 2.5V maximum at 15V gate-emitter voltage and 20A collector current, with typical turn-on and turn-off delays of 36ns and 250ns respectively, under test conditions of 400V, 20A, 16 Ohms, and 15V. The operating temperature range is -55°C to 150°C (TJ). This Infineon Technologies IGBT die is suitable for surface mount configurations and is supplied in bulk packaging. Its robust performance characteristics make it a suitable choice for power conversion systems in the industrial and automotive sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseDie
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
Supplier Device PackageDie
IGBT TypeNPT
Td (on/off) @ 25°C36ns/250ns
Switching Energy-
Test Condition400V, 20A, 16Ohm, 15V
Current - Collector (Ic) (Max)20 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)60 A

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