SIGC18T60SNCX1SA3
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC18T60SNCX1SA3 is a 600V NPT IGBT die designed for demanding power electronics applications. This component features a 20A continuous collector current (Ic) and a 60A pulsed collector current (Icm), making it suitable for high-power switching. The IGBT exhibits a Vce(on) of 2.5V at 15V gate-emitter voltage and 20A collector current, with typical turn-on and turn-off delays of 36ns and 250ns respectively, under a 400V, 20A, 16 Ohm, 15V test condition. Operating across a wide temperature range of -55°C to 150°C (TJ), this die is presented in bulk packaging. Its robust construction and performance characteristics make it a key component in industrial power supplies, electric vehicle drivetrains, and renewable energy inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 36ns/250ns |
| Switching Energy | - |
| Test Condition | 400V, 20A, 16Ohm, 15V |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
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