SIGC18T60NCX7SA1
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
Infineon Technologies SIGC18T60NCX7SA1 is an NPT IGBT die designed for high-power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current of 20A, with a pulsed current capability of 60A. The on-state voltage (Vce(on)) is a maximum of 2.5V at 15V gate-emitter voltage and 20A collector current. Switching characteristics include a turn-on delay (Td(on)) of 21ns and a turn-off delay (Td(off)) of 110ns at 25°C, tested under 300V, 20A, 13 Ohm, and 15V conditions. Operating across a wide temperature range of -55°C to 150°C (TJ), this die is suitable for demanding environments. Its robust construction and performance parameters make it ideal for use in industrial motor control, power supplies, and automotive systems. The device is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 21ns/110ns |
| Switching Energy | - |
| Test Condition | 300V, 20A, 13Ohm, 15V |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
Request a Quote
Clients Also Buy
AUIRGS4062D1
IGBT 600V 59A 246W D2PAK
IGW50N60TPXKSA1
IGBT TRENCH/FS 600V 80A TO247-3
IKZ75N65EL5XKSA1
IGBT 650V 100A TO247-4
