SIGC18T60NCX1SA6
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
Infineon Technologies SIGC18T60NCX1SA6 is an NPT IGBT die designed for demanding power switching applications. This component offers a collector-emitter breakdown voltage of 600V and a continuous collector current capability of 20A, with a pulsed current rating of 60A. Its on-state voltage (Vce(on)) is specified at a maximum of 2.5V at 15V gate-emitter voltage and 20A collector current. The device exhibits typical switching times of 21ns for turn-on and 110ns for turn-off at 25°C, under test conditions of 300V, 20A, and 13 Ohm load with a 15V gate drive. Operating across a wide temperature range of -55°C to 150°C (TJ), this die is suitable for surface mount integration. It finds application in high-power motor control, industrial power supplies, and electric vehicle powertrains. This Infineon Technologies IGBT die is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 21ns/110ns |
| Switching Energy | - |
| Test Condition | 300V, 20A, 13Ohm, 15V |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
Request a Quote
Clients Also Buy
IRGBF20F
IGBT FAST 900V 20A TO-220AB
IHW15N120R2
IGBT 1200V 30A 357W TO247-3
IKW30N65ET7XKSA1
IGBT TRENCH FS 650V 30A TO247-3
