SIGC18T60NCX1SA5
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC18T60NCX1SA5 is an NPT IGBT die designed for high-performance applications. This component offers a 600 V collector-emitter breakdown voltage and a continuous collector current of 20 A, with a pulsed current capability of 60 A. The on-state voltage (Vce(on)) is a maximum of 2.5 V at 15 V gate-emitter voltage and 20 A collector current. Switching characteristics are specified at 21 ns turn-on time and 110 ns turn-off time under test conditions of 300 V, 20 A, 13 Ohm load, and 15 V gate drive. Operating temperature ranges from -55°C to 150°C. This un-packaged die is supplied in bulk and is suitable for surface mount integration. Applications include power factor correction, inverters, and motor drives within the industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 21ns/110ns |
| Switching Energy | - |
| Test Condition | 300V, 20A, 13Ohm, 15V |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
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