SIGC18T60NCX1SA4
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies NPT IGBT Die, SIGC18T60NCX1SA4, offers robust performance for demanding applications. This device features a 600V collector-emitter breakdown voltage and a continuous collector current of 20A, with a pulsed current capability of 60A. Key parameters include a Vce(on) of 2.5V at 15V gate-emitter voltage and 20A collector current, and switching times of 21ns turn-on and 110ns turn-off at 300V and 20A. The NPT IGBT technology ensures high efficiency and reliability. Operating within a temperature range of -55°C to 150°C (TJ), this die-level component is suitable for surface mount integration. Its design makes it well-suited for power factor correction, motor control, and power supply applications in the industrial and automotive sectors. Packaged in bulk, the SIGC18T60NCX1SA4 is provided as a bare die for advanced circuit design and fabrication.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 21ns/110ns |
| Switching Energy | - |
| Test Condition | 300V, 20A, 13Ohm, 15V |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
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