SIGC18T60NCX1SA3
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies' SIGC18T60NCX1SA3 is an NPT IGBT die designed for high-performance power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 20A, with a pulsed capability of 60A. The Vce(on) is specified at 2.5V maximum under test conditions of 15V gate-emitter voltage and 20A collector current. Typical switching characteristics include a turn-on delay of 21ns and a turn-off delay of 110ns at 25°C. Operating across a wide temperature range of -55°C to 150°C (TJ), this die is packaged in bulk for integration into custom power modules. Applications for this device can be found in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 21ns/110ns |
| Switching Energy | - |
| Test Condition | 300V, 20A, 13Ohm, 15V |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
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