SIGC18T60NCX1SA1
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
Infineon Technologies SIGC18T60NCX1SA1 is a 600V NPT IGBT die designed for demanding power applications. This component features a robust 60A pulsed collector current (Icm) and a continuous collector current (Ic) of 20A, with a low on-state voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 20A collector current. Optimized for efficient switching, it exhibits typical turn-on delay (Td(on)) of 21ns and turn-off delay (Td(off)) of 110ns at 25°C under test conditions of 300V, 20A, 13 Ohm, and 15V. Operating across a wide temperature range of -55°C to 150°C (TJ), this die is suitable for surface mount integration in high-power systems. Industries utilizing this technology include industrial automation, motor control, and power supply design. Supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 20A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 21ns/110ns |
| Switching Energy | - |
| Test Condition | 300V, 20A, 13Ohm, 15V |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 60 A |
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