SIGC15T60SEX7SA1
IGBT 3 CHIP 600VManufacturer: Infineon Technologies
Categories: Single IGBTs
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The Infineon Technologies SIGC15T60SEX7SA1 is a Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. This component features a 600 V collector-emitter breakdown voltage and supports a continuous collector current of 30 A, with a pulsed collector current capability of 90 A. The Vce(on) is specified at a maximum of 2.05 V at 15 V gate-emitter voltage and 30 A collector current. Operating across a temperature range of -40°C to 175°C (TJ), this IGBT is delivered as a bare die in bulk packaging. Its robust design makes it suitable for demanding applications in power factor correction, industrial motor control, and renewable energy systems. The TrenchStop™ technology ensures optimized switching characteristics and low conduction losses.
Additional Information
Series: TrenchStop™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.05V @ 15V, 30A |
| Supplier Device Package | Die |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 90 A |
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