SIGC156T60NR2CX7SA1
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
Infineon Technologies SIGC156T60NR2CX7SA1 is an NPT IGBT die designed for high-power applications. This component features a collector-emitter breakdown voltage of 600 V and a continuous collector current capability of 200 A, with a pulsed capability of 600 A. The on-state voltage (Vce(on)) is a maximum of 2.5 V at 15 V gate-emitter voltage and 200 A collector current. Typical switching times are 180 ns turn-on and 285 ns turn-off, measured at 300 V, 200 A, 1.5 Ohm, and 15 V. Operating across a temperature range of -55°C to 150°C (TJ), this die is suitable for surface mount configurations and is supplied in bulk packaging. This IGBT is commonly utilized in industrial motor drives, power factor correction circuits, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 200A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 180ns/285ns |
| Switching Energy | - |
| Test Condition | 300V, 200A, 1.5Ohm, 15V |
| Current - Collector (Ic) (Max) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 600 A |
Request a Quote
Clients Also Buy
IGW50N60TPXKSA1
IGBT TRENCH/FS 600V 80A TO247-3
IKZ75N65EL5XKSA1
IGBT 650V 100A TO247-4
SIGC57T120R3LEX1SA3
IGBT 1200V 50A DIE
