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SIGC156T60NR2CX1SA4

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SIGC156T60NR2CX1SA4

IGBT 3 CHIP 600V WAFER

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies SIGC156T60NR2CX1SA4 is a 600V NPT IGBT die designed for high-power switching applications. This component features a 200A continuous collector current (Ic) rating, with a pulsed capability of 600A (Icm), making it suitable for demanding power conversion tasks. The on-state voltage (Vce(on)) is a maximum of 2.5V at 15V gate-emitter voltage and 200A collector current, with typical switching times of 180ns turn-on and 285ns turn-off at 25°C. Operating across a temperature range of -55°C to 150°C (TJ), this die is packaged in bulk for integration into custom power modules. This IGBT is commonly utilized in industrial motor drives, welding equipment, and uninterruptible power supplies.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseDie
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 200A
Supplier Device PackageDie
IGBT TypeNPT
Td (on/off) @ 25°C180ns/285ns
Switching Energy-
Test Condition300V, 200A, 1.5Ohm, 15V
Current - Collector (Ic) (Max)200 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)600 A

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