SIGC156T60NR2CX1SA2
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC156T60NR2CX1SA2 is a 600V NPT IGBT die designed for high-power applications. This component offers a continuous collector current of 200A and a pulsed collector current of 600A, with a low Vce(on) of 2.5V at 15V gate-emitter voltage and 200A collector current. Typical switching times are 180ns turn-on and 285ns turn-off, tested at 300V and 200A. The operating temperature range is -55°C to 150°C (TJ). This die-form component is suitable for surface mount integration and finds application in industrial motor drives, power factor correction, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 200A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 180ns/285ns |
| Switching Energy | - |
| Test Condition | 300V, 200A, 1.5Ohm, 15V |
| Current - Collector (Ic) (Max) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 600 A |
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