SIGC14T60SNCX7SA2
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC14T60SNCX7SA2 is a high-performance NPT IGBT die designed for demanding power applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 15 A, with a pulsed capability of up to 45 A. The on-state voltage (Vce(on)) is a maximum of 2.5 V at 15 V gate drive and 15 A collector current, achieved under test conditions of 400 V, 15 A, and 21 Ohms. Typical switching times are 31 ns turn-on and 261 ns turn-off at 25°C. Operating across a wide temperature range of -55°C to 150°C (TJ), this die is suitable for surface mount integration. It finds application in industrial motor control, power supplies, and automotive systems where robust switching characteristics are essential. The device is supplied in a bulk package as a die.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 15A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 31ns/261ns |
| Switching Energy | - |
| Test Condition | 400V, 15A, 21Ohm, 15V |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 45 A |
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