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SIGC14T60SNCX7SA1

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SIGC14T60SNCX7SA1

IGBT 3 CHIP 600V WAFER

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies' SIGC14T60SNCX7SA1 is a 600V NPT IGBT die designed for high-performance power switching applications. This component offers a continuous collector current of 15A and a pulsed collector current of 45A, with a low collector-emitter saturation voltage of 2.5V at 15V gate-emitter voltage and 15A collector current. The standard input type and surface mount die package are suitable for demanding thermal management and compact designs. Operating reliably across a temperature range of -55°C to 150°C (TJ), this IGBT exhibits typical on-delay and off-delay times of 31ns and 261ns respectively, under test conditions of 400V, 15A, and 21 Ohm with a 15V gate drive. The SIGC14T60SNCX7SA1 is commonly utilized in industrial motor drives, renewable energy systems, and uninterruptible power supplies where robust power handling and efficient switching are critical.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseDie
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 15A
Supplier Device PackageDie
IGBT TypeNPT
Td (on/off) @ 25°C31ns/261ns
Switching Energy-
Test Condition400V, 15A, 21Ohm, 15V
Current - Collector (Ic) (Max)15 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)45 A

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