SIGC14T60SNCX1SA6
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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The Infineon Technologies SIGC14T60SNCX1SA6 is an NPT IGBT die designed for high-voltage, high-current applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current (Ic) rating of 15A, with a pulsed current (Icm) capability of 45A. The on-state voltage (Vce(on)) at the specified test conditions is a maximum of 2.5V. It exhibits typical switching times of 31ns turn-on and 261ns turn-off. Operating across a wide temperature range from -55°C to 150°C, this die is supplied in bulk packaging for surface mount integration. The SIGC14T60SNCX1SA6 finds utility in demanding power electronics applications across industrial and automotive sectors requiring robust switching performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 15A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 31ns/261ns |
| Switching Energy | - |
| Test Condition | 400V, 15A, 21Ohm, 15V |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 45 A |
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