SIGC14T60SNCX1SA5
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC14T60SNCX1SA5 is a robust NPT IGBT die designed for high-power applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current of 15A, with a pulsed capability of 45A. Featuring a low on-state voltage of 2.5V at 15V gate-emitter voltage and 15A collector current, it ensures efficient power transfer. The device exhibits typical switching times of 31ns turn-on and 261ns turn-off under the specified test conditions of 400V, 15A, 21 Ohm, and 15V. Operating across a wide temperature range from -55°C to 150°C, this surface mount die is suitable for demanding environments. Its advanced architecture makes it a key component in industrial motor drives, power supplies, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 15A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 31ns/261ns |
| Switching Energy | - |
| Test Condition | 400V, 15A, 21Ohm, 15V |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 45 A |
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