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SIGC14T60SNCX1SA3

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SIGC14T60SNCX1SA3

IGBT 3 CHIP 600V WAFER

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies SIGC14T60SNCX1SA3, a NPT IGBT die, offers a 600V collector-emitter breakdown voltage with a continuous collector current rating of 15A at a Vce(on) of 2.5V (15V, 15A). This device features a standard input and is designed for surface mount applications. The SIGC14T60SNCX1SA3 exhibits typical switching times of 31ns turn-on and 261ns turn-off under test conditions of 400V, 15A, and 21 Ohms with a 15V gate drive. Its operating temperature range spans from -55°C to 150°C (TJ). This component is suitable for use in power factor correction, motor drives, and industrial power supplies. The SIGC14T60SNCX1SA3 is supplied in bulk packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseDie
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 15A
Supplier Device PackageDie
IGBT TypeNPT
Td (on/off) @ 25°C31ns/261ns
Switching Energy-
Test Condition400V, 15A, 21Ohm, 15V
Current - Collector (Ic) (Max)15 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)45 A

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