SIGC14T60SNCX1SA2
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC14T60SNCX1SA2 is an NPT IGBT die designed for high-performance power switching applications. This component offers a 600 V collector-emitter breakdown voltage with a continuous collector current capability of 15 A, expandable to 45 A pulsed. The Vce(on) is 2.5 V at 15 V gate voltage and 15 A collector current, ensuring efficient operation. With a standard input type and a surface mount die package, it is suitable for demanding thermal management scenarios. The operating temperature range is -55°C to 150°C (TJ). Typical switching times are 31 ns turn-on and 261 ns turn-off, measured at 400 V, 15 A, 21 Ohm, and 15 V. This device is commonly utilized in industrial motor control, power factor correction, and uninterruptible power supply (UPS) systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 15A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 31ns/261ns |
| Switching Energy | - |
| Test Condition | 400V, 15A, 21Ohm, 15V |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 45 A |
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