SIGC14T60NCX7SA2
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC14T60NCX7SA2 is an NPT IGBT die designed for high-performance power switching applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 15A, with a pulsed current capability of 45A. The Vce(on) is specified at a maximum of 2.5V under test conditions of 15V gate-emitter voltage and 15A collector current. Typical switching times are 21ns for turn-on and 110ns for turn-off at 25°C, with a test condition of 300V, 15A, 18 Ohm, and 15V. Operating across a temperature range of -55°C to 150°C (TJ), this die is suitable for demanding environments. The SIGC14T60NCX7SA2 is commonly utilized in industrial motor drives, power supplies, and renewable energy systems. Supplied in bulk packaging as a die.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 15A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 21ns/110ns |
| Switching Energy | - |
| Test Condition | 300V, 15A, 18Ohm, 15V |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 45 A |
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