SIGC14T60NCX1SA7
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC14T60NCX1SA7 is an NPT IGBT die designed for demanding applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 15 A, with a pulsed capability of 45 A. The on-state voltage (Vce(on)) is a maximum of 2.5 V at 15 V gate voltage and 15 A collector current, with typical turn-on and turn-off times of 21 ns and 110 ns respectively, tested under 300 V, 15 A, 18 Ohm, 15 V conditions. Operating across a wide temperature range of -55°C to 150°C (TJ), this die is suitable for surface mount configurations. It is commonly employed in industrial power systems, motor drives, and power factor correction circuits. The part is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 15A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 21ns/110ns |
| Switching Energy | - |
| Test Condition | 300V, 15A, 18Ohm, 15V |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 45 A |
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