SIGC14T60NCX1SA6
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC14T60NCX1SA6 is a high-performance NPT IGBT die designed for demanding applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current rating of 15A, with a pulsed capability of 45A. The Vce(on) is specified at a maximum of 2.5V at 15V gate-emitter voltage and 15A collector current, achieved under test conditions of 300V, 15A, 18 Ohm, and 15V. Switching characteristics include turn-on delay (Td(on)) of 21ns and turn-off delay (Td(off)) of 110ns at 25°C. Operating temperature ranges from -55°C to 150°C. This die-level component is suitable for surface mount integration and is supplied in bulk packaging. Its robust design lends itself to use in industrial motor drives, power factor correction, and uninterruptible power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 15A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 21ns/110ns |
| Switching Energy | - |
| Test Condition | 300V, 15A, 18Ohm, 15V |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 45 A |
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