SIGC14T60NCX1SA3
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC14T60NCX1SA3 is an NPT IGBT die designed for demanding applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current capability of 15A, with a pulsed rating of 45A. The Vce(on) is specified at a maximum of 2.5V at 15V gate-emitter voltage and 15A collector current. Switching characteristics include a typical turn-on delay of 21ns and turn-off delay of 110ns, tested under 300V, 15A, and 18 Ohm conditions with a 15V gate drive. Operating temperature ranges from -55°C to 150°C. The SIGC14T60NCX1SA3 is supplied as a die, intended for surface mounting. This IGBT is suitable for use in power factor correction, motor drives, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 15A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 21ns/110ns |
| Switching Energy | - |
| Test Condition | 300V, 15A, 18Ohm, 15V |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 45 A |
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