SIGC12T60SNCX7SA1
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC12T60SNCX7SA1 is a high-performance NPT IGBT die designed for demanding applications. This component features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 10 A, with a pulsed capability of 30 A. The Vce(on) is a maximum of 2.5 V at 15 V gate-emitter voltage and 10 A collector current, achieved under specific test conditions of 400 V, 10 A, and 25 Ohms.
The SIGC12T60SNCX7SA1 is manufactured as a bare die for surface mount integration, offering flexibility in circuit design. It operates within a temperature range of -55°C to 150°C (TJ). Typical switching times are 29 ns turn-on and 266 ns turn-off at 25°C. This device is suitable for power conversion systems within industrial, automotive, and renewable energy sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 10A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 29ns/266ns |
| Switching Energy | - |
| Test Condition | 400V, 10A, 25Ohm, 15V |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 30 A |
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