SIGC12T60SNCX1SA4
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
Infineon Technologies SIGC12T60SNCX1SA4 is a high-performance Power Stage NPT IGBT die designed for demanding applications. This component features a 600V collector-emitter breakdown voltage, with a continuous collector current (Ic) of 10A and a pulsed collector current (Icm) of 30A. The Vce(on) is specified at a maximum of 2.5V at 15V gate-emitter voltage and 10A collector current, with typical switching times of 29ns turn-on and 266ns turn-off at 400V, 10A, 25 Ohm, 15V. Operating across a wide temperature range of -55°C to 150°C (TJ), this die is ideal for surface mount configurations. Its robust design makes it suitable for use in industrial motor drives, power factor correction, and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 10A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 29ns/266ns |
| Switching Energy | - |
| Test Condition | 400V, 10A, 25Ohm, 15V |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 30 A |
Request a Quote
Clients Also Buy
IRGBF20F
IGBT FAST 900V 20A TO-220AB
IHW15N120R2
IGBT 1200V 30A 357W TO247-3
IKW30N65ET7XKSA1
IGBT TRENCH FS 650V 30A TO247-3
