SIGC12T60SNCX1SA3
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC12T60SNCX1SA3 is a 600V NPT IGBT die designed for high-performance power switching applications. This component offers a continuous collector current of 10A and a pulsed collector current of 30A, with a Vce(on) of 2.5V at 15V Vge and 10A. The input type is standard, and it features a surface mount die package, supplied in bulk packaging. Key electrical characteristics include a breakdown voltage of 600V and typical switching times of 29ns turn-on and 266ns turn-off at 25°C, tested under 400V, 10A, 25 Ohm, and 15V conditions. The operating temperature range is from -55°C to 150°C (TJ). This IGBT die is utilized in industrial applications such as power supplies, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 10A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 29ns/266ns |
| Switching Energy | - |
| Test Condition | 400V, 10A, 25Ohm, 15V |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 30 A |
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