SIGC12T60SNCX1SA2
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC12T60SNCX1SA2 is a 600V NPT IGBT die designed for high-performance applications. This component offers a continuous collector current of 10A and a pulsed collector current of 30A, with a Vce(on) of 2.5V at 15V gate drive and 10A collector current. The input type is standard, and the device exhibits typical switching times of 29ns turn-on and 266ns turn-off at 25°C, tested under 400V, 10A, 25 Ohm, and 15V conditions. Operating across a wide temperature range of -55°C to 150°C (TJ), this die is supplied in bulk packaging. Its robust design makes it suitable for use in industrial motor drives, power supplies, and automotive applications where efficient power switching is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 10A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 29ns/266ns |
| Switching Energy | - |
| Test Condition | 400V, 10A, 25Ohm, 15V |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 30 A |
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