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SIGC12T60NCX7SA1

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SIGC12T60NCX7SA1

IGBT 3 CHIP 600V WAFER

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies SIGC12T60NCX7SA1 is a 600V NPT IGBT die designed for high-performance power switching applications. This component offers a continuous collector current of 10A and a pulsed collector current of 30A, with a Vce(on) of 2.5V at 15V gate drive and 10A. The standard input type and surface mount die package are suitable for compact power module designs. Typical switching characteristics include a turn-on delay of 21ns and a turn-off delay of 110ns at 25°C, tested under 300V, 10A, 27 Ohm, and 15V conditions. Operating across an extended temperature range of -55°C to 150°C (TJ), this IGBT is utilized in industries such as industrial automation, motor control, and renewable energy systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseDie
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 10A
Supplier Device PackageDie
IGBT TypeNPT
Td (on/off) @ 25°C21ns/110ns
Switching Energy-
Test Condition300V, 10A, 27Ohm, 15V
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)30 A

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