SIGC12T60NCX1SA5
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC12T60NCX1SA5 is a 600V NPT IGBT die designed for high-power applications. This component features a continuous collector current (Ic) of 10A and a pulsed collector current (Icm) of 30A, with a Vce(on) of 2.5V at 15V gate drive and 10A. The standard input type and surface mount die package facilitate integration into power modules. Key switching characteristics include a turn-on delay (Td(on)) of 21ns and a turn-off delay (Td(off)) of 110ns at 25°C, tested under a 300V, 10A, 27 Ohm, 15V condition. Operating across a temperature range of -55°C to 150°C (TJ), the SIGC12T60NCX1SA5 is suitable for demanding power conversion and motor control applications in industries such as industrial automation and renewable energy systems. This device is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 10A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 21ns/110ns |
| Switching Energy | - |
| Test Condition | 300V, 10A, 27Ohm, 15V |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 30 A |
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