SIGC12T60NCX1SA3
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
The Infineon Technologies SIGC12T60NCX1SA3 is a non-punch-through (NPT) Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. This bare die component offers a 600V collector-emitter breakdown voltage and a continuous collector current capability of 10A, with a pulsed capability of 30A. Featuring a standard input type, the SIGC12T60NCX1SA3 exhibits a Vce(on) of 2.5V at 15V gate-emitter voltage and 10A collector current. Switching characteristics include a typical turn-on delay of 21ns and turn-off delay of 110ns, tested under 300V, 10A, and 27 Ohm load with a 15V gate drive. Operating across a wide temperature range from -55°C to 150°C (TJ), this Infineon Technologies IGBT die is suitable for surface mount integration. Industries such as industrial motor drives, power supplies, and automotive electronics commonly utilize components of this nature. The SIGC12T60NCX1SA3 is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 10A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 21ns/110ns |
| Switching Energy | - |
| Test Condition | 300V, 10A, 27Ohm, 15V |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 30 A |
Request a Quote
Clients Also Buy
IRGBF20F
IGBT FAST 900V 20A TO-220AB
IHW15N120R2
IGBT 1200V 30A 357W TO247-3
IKW30N65ET7XKSA1
IGBT TRENCH FS 650V 30A TO247-3
