SIGC121T60NR2CX7SA1
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC121T60NR2CX7SA1 is an NPT IGBT die designed for high-power switching applications. This component features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 150 A, with a pulsed current capability of 450 A. The Vce(on) is specified at a maximum of 2.5 V at 15 V gate-emitter voltage and 150 A collector current. Switching characteristics include typical turn-on delay of 125 ns and turn-off delay of 225 ns at 25°C under test conditions of 300 V, 150 A, 1.5 Ohm, and 15 V. Operating temperature ranges from -55°C to 150°C (TJ). This die is supplied in bulk packaging. The SIGC121T60NR2CX7SA1 is suitable for use in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 150A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 125ns/225ns |
| Switching Energy | - |
| Test Condition | 300V, 150A, 1.5Ohm, 15V |
| Current - Collector (Ic) (Max) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 450 A |
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