SIGC121T60NR2CX1SA2
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC121T60NR2CX1SA2 is an NPT IGBT die designed for high-power applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current capability of 150A (450A pulsed) at a Vce(on) of 2.5V under test conditions of 300V, 150A, 1.5 Ohm, and 15V gate drive. The standard input type and surface mount die package facilitate integration into advanced power modules. Operating across a temperature range of -55°C to 150°C, it offers typical switching times of 125ns turn-on and 225ns turn-off. This Infineon Technologies IGBT die is suitable for demanding industrial automation, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 150A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 125ns/225ns |
| Switching Energy | - |
| Test Condition | 300V, 150A, 1.5Ohm, 15V |
| Current - Collector (Ic) (Max) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 450 A |
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