SIGC11T60SNCX1SA2
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
Quality Control: Learn More
Infineon Technologies SIGC11T60SNCX1SA2 is an NPT IGBT die designed for high-performance power switching applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current rating of 10A, with a pulsed current capability of up to 30A. The Vce(on) is specified at a maximum of 2.4V at 15V gate-emitter voltage and 10A collector current, achieved under specific test conditions of 400V, 10A, 25 Ohm, and 15V. The typical switching times are 28ns turn-on and 198ns turn-off at 25°C. Operating across a wide temperature range of -55°C to 150°C (TJ), this die is presented in bulk packaging. This device is suitable for use in industrial motor drives, power supplies, and automotive applications where efficient power management is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 10A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 28ns/198ns |
| Switching Energy | - |
| Test Condition | 400V, 10A, 25Ohm, 15V |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 30 A |
Request a Quote
Clients Also Buy
IRGBF20F
IGBT FAST 900V 20A TO-220AB
IHW15N120R2
IGBT 1200V 30A 357W TO247-3
IKW30N65ET7XKSA1
IGBT TRENCH FS 650V 30A TO247-3
