SIGC11T60SNCX1SA1
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC11T60SNCX1SA1 is an NPT IGBT die designed for high-voltage applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current (Ic) of 10A, with a pulsed collector current (Icm) of 30A. The Vce(on) is rated at a maximum of 2.4V at 15V gate-emitter voltage and 10A collector current, tested under 400V, 10A, 25 Ohm, 15V conditions. Switching characteristics include a typical turn-on delay (Td(on)) of 28ns and a turn-off delay (Td(off)) of 198ns at 25°C. Operating within a temperature range of -55°C to 150°C (TJ), this surface mount die is supplied in bulk packaging. The SIGC11T60SNCX1SA1 is suitable for power factor correction, motor control, and uninterruptible power supply (UPS) systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 10A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 28ns/198ns |
| Switching Energy | - |
| Test Condition | 400V, 10A, 25Ohm, 15V |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 30 A |
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