SIGC11T60NCX1SA2
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC11T60NCX1SA2 is a 600V NPT IGBT die designed for high-performance power switching applications. This component features a 10A continuous collector current (Ic) and a 30A pulsed collector current (Icm), with a Vce(on) of 2.5V at 15V gate drive and 10A collector current for efficient operation. The rapid switching characteristics are evidenced by typical turn-on and turn-off times of 20ns and 110ns respectively, tested under a 300V, 10A, 27 Ohm, 15V condition. Operating across a wide temperature range of -55°C to 150°C (TJ), this IGBT die is suitable for demanding environments. It finds application in industrial motor drives, power factor correction, and high-voltage power supplies. The device is supplied as a bare die in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 10A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 20ns/110ns |
| Switching Energy | - |
| Test Condition | 300V, 10A, 27Ohm, 15V |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 30 A |
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