SIGC109T120R3
INSULATED GATE BIPOLAR TRANSISTOManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies, a leading innovator in power semiconductors, offers the SIGC109T120R3, a high-performance Insulated Gate Bipolar Transistor (IGBT) presented as a die for advanced surface-mount applications. This Trench Field Stop IGBT boasts a robust 1200V collector-emitter breakdown voltage, making it suitable for demanding power conversion and control systems. It is engineered for efficient switching with a typical on-state voltage (Vce(on)) of 2.1V at 15V gate voltage and 100A collector current. The SIGC109T120R3 is designed for operation across a wide temperature range from -55°C to 150°C (TJ). Its construction as a die allows for highly customized module integration in industries such as industrial automation, renewable energy, and electric vehicle powertrains, where superior power density and thermal management are critical. The component is supplied in bulk packaging, catering to high-volume manufacturing needs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 100A |
| Supplier Device Package | Die |
| IGBT Type | Trench Field Stop |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 300 A |
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