SIGC07T60SNCX7SA2
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC07T60SNCX7SA2 is an NPT IGBT die designed for high-performance power switching applications. This component operates with a collector-emitter breakdown voltage of 600V and a continuous collector current of 6A, with a pulsed capability of 18A. The on-state voltage (Vce(on)) is a maximum of 2.5V at 15V gate-emitter voltage and 6A collector current, achieved under specific test conditions of 400V, 6A, and 50 Ohm.
This surface mount die offers efficient switching characteristics, with typical turn-on delay (Td(on)) of 24ns and turn-off delay (Td(off)) of 248ns at 25°C. Engineered for demanding environments, it operates across an extended temperature range of -55°C to 150°C. The SIGC07T60SNCX7SA2 is suitable for use in industrial power supplies, motor control, and renewable energy systems. It is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 6A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 24ns/248ns |
| Switching Energy | - |
| Test Condition | 400V, 6A, 50Ohm, 15V |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 18 A |
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