SIGC07T60SNCX1SA4
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC07T60SNCX1SA4 is an NPT IGBT die designed for high-performance power switching applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current of 6A, with a pulsed capability of 18A. The Vce(on) is specified at 2.5V maximum for a gate-source voltage of 15V and a collector current of 6A, under typical test conditions of 400V and 6A with a 50 Ohm load. On-state and off-state switching times are 24ns and 248ns respectively at 25°C. The operating temperature range spans from -55°C to 150°C. This die is supplied in bulk packaging and is suitable for surface mount integration. Applications for this type of technology are prevalent in industrial automation, power supplies, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 6A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 24ns/248ns |
| Switching Energy | - |
| Test Condition | 400V, 6A, 50Ohm, 15V |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 18 A |
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