SIGC07T60NCX7SA1
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies presents the SIGC07T60NCX7SA1, an NPT IGBT die designed for high-performance applications. This component offers a 600V collector-emitter breakdown voltage and a continuous collector current of 6A, with a pulsed capability of up to 18A. The on-state voltage (Vce(on)) is a maximum of 2.5V at 15V gate-emitter voltage and 6A collector current. Switching characteristics include a turn-on delay (Td(on)) of 21ns and a turn-off delay (Td(off)) of 110ns, both specified at 25°C under test conditions of 300V, 6A, 54 Ohms, and 15V. The device operates across a wide temperature range from -55°C to 150°C (TJ). This bare die format is suitable for advanced power module integration in industries such as industrial motor control, power supplies, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 6A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 21ns/110ns |
| Switching Energy | - |
| Test Condition | 300V, 6A, 54Ohm, 15V |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 18 A |
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