SIGC07T60NCX1SA4
IGBT 3 CHIP 600V WAFERManufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SIGC07T60NCX1SA4 is an NPT IGBT die designed for high-performance power switching applications. This component offers a 600 V collector-emitter breakdown voltage and a continuous collector current capability of 6 A, with a pulsed current rating of 18 A. The on-state voltage (Vce(on)) is a maximum of 2.5 V at 15 V gate drive and 6 A collector current, with typical switching times of 21 ns turn-on and 110 ns turn-off at 300 V and 6 A. Operating across a temperature range of -55°C to 150°C (TJ), this die-format IGBT is suitable for surface mount configurations. The SIGC07T60NCX1SA4 finds application in industries such as industrial automation, power supplies, and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 6A |
| Supplier Device Package | Die |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 21ns/110ns |
| Switching Energy | - |
| Test Condition | 300V, 6A, 54Ohm, 15V |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 18 A |
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