SGW50N60HSFKSA1
IGBT 600V 100A 416W TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SGW50N60HSFKSA1 is a high-speed NPT IGBT designed for demanding power applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current of 100A (150A pulsed). With a maximum power dissipation of 416W and a low on-state voltage of 3.15V at 15V gate drive and 50A collector current, it ensures efficient operation. The device exhibits low switching energy of 1.96mJ and fast switching times (47ns on, 310ns off) under typical test conditions (400V, 50A, 6.8 Ohm, 15V). The gate charge is 179 nC. Packaged in a PG-TO247-3-1 through-hole format, it operates across a wide temperature range of -55°C to 150°C (TJ). This IGBT is suitable for applications in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.15V @ 15V, 50A |
| Supplier Device Package | PG-TO247-3-1 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 47ns/310ns |
| Switching Energy | 1.96mJ |
| Test Condition | 400V, 50A, 6.8Ohm, 15V |
| Gate Charge | 179 nC |
| Current - Collector (Ic) (Max) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 150 A |
| Power - Max | 416 W |
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