SGW15N120FKSA1
IGBT 1200V 30A 198W TO247-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SGW15N120FKSA1 is an NPT IGBT designed for high-voltage applications. This component features a collector-emitter voltage of 1200V and a continuous collector current of 30A, with a pulsed capability of 52A. The device offers a maximum power dissipation of 198W and a collector-emitter saturation voltage (Vce(on)) of 3.6V at 15V gate-emitter voltage and 15A collector current.
The SGW15N120FKSA1 exhibits typical on-state and off-state switching times of 18ns and 580ns respectively, at 25°C, with a switching energy of 1.9mJ under test conditions of 800V, 15A, 33 Ohm, and 15V. Its gate charge is rated at 130nC. The IGBT is housed in a PG-TO247-3-1 package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C (TJ). This component is utilized in power factor correction, motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 15A |
| Supplier Device Package | PG-TO247-3-1 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 18ns/580ns |
| Switching Energy | 1.9mJ |
| Test Condition | 800V, 15A, 33Ohm, 15V |
| Gate Charge | 130 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 52 A |
| Power - Max | 198 W |
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