SGP15N120XKSA1
IGBT 1200V 30A 198W TO220-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SGP15N120XKSA1 is an NPT IGBT designed for high-voltage applications. This through-hole component features a collector-emitter voltage of 1200V and a continuous collector current of 30A, with a pulsed current capability of 52A. The device offers a maximum power dissipation of 198W and a gate charge of 130 nC. With an on-state voltage of 3.6V at 15V gate-emitter voltage and 15A collector current, and a switching energy of 1.9mJ under test conditions of 800V, 15A, 33 Ohm, and 15V, it is suitable for demanding power conversion tasks. Its operating temperature range is -55°C to 150°C. The SGP15N120XKSA1 is packaged in a PG-TO220-3-1 configuration, commonly utilized in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 15A |
| Supplier Device Package | PG-TO220-3-1 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 18ns/580ns |
| Switching Energy | 1.9mJ |
| Test Condition | 800V, 15A, 33Ohm, 15V |
| Gate Charge | 130 nC |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 52 A |
| Power - Max | 198 W |
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