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SGI02N120XKSA1

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SGI02N120XKSA1

IGBT 1200V 6.2A 62W TO262-3

Manufacturer: Infineon Technologies

Categories: Single IGBTs

Quality Control: Learn More

Infineon Technologies SGI02N120XKSA1 is an NPT IGBT featuring a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 6.2A (9.6A pulsed). This through-hole component, packaged in a PG-TO262-3-1 (TO-262-3 Long Leads, I2PAK, TO-262AA), offers a maximum power dissipation of 62W. Key performance parameters include a typical gate charge of 11 nC and switching times of 23ns (on) and 260ns (off) at 25°C, with switching energy specified at 220µJ under test conditions of 800V, 2A, 91 Ohm, and 15V. The on-state voltage (Vce(on)) is a maximum of 3.6V at 15V gate-source voltage and 2A collector current. This device operates across a wide ambient temperature range of -55°C to 150°C. It is suitable for applications in industrial power supplies and motor control.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic3.6V @ 15V, 2A
Supplier Device PackagePG-TO262-3-1
IGBT TypeNPT
Td (on/off) @ 25°C23ns/260ns
Switching Energy220µJ
Test Condition800V, 2A, 91Ohm, 15V
Gate Charge11 nC
Current - Collector (Ic) (Max)6.2 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)9.6 A
Power - Max62 W

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