SGB20N60ATMA1
IGBT 600V 40A 179W TO263-3Manufacturer: Infineon Technologies
Categories: Single IGBTs
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Infineon Technologies SGB20N60ATMA1 is a 600V NPT IGBT designed for high-power switching applications. This component features a collector current rating of 40A (80A pulsed) and a maximum power dissipation of 179W. The Vce(on) is specified at 2.4V maximum at 15V Vge and 20A Ic. Switching characteristics include typical turn-on delay of 36ns and turn-off delay of 225ns at 25°C, with switching energy of 440µJ (on) and 330µJ (off) under test conditions of 400V, 20A, 16 Ohm, and 15V Vge. The gate charge is 100 nC. Packaged in a PG-TO263-3-2 (TO-263-3, D2PAK) for surface mounting, this IGBT operates across a temperature range of -55°C to 150°C. It is supplied in Tape & Reel packaging. This device is suitable for use in power factor correction, motor control, and industrial power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 20A |
| Supplier Device Package | PG-TO263-3-2 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 36ns/225ns |
| Switching Energy | 440µJ (on), 330µJ (off) |
| Test Condition | 400V, 20A, 16Ohm, 15V |
| Gate Charge | 100 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 179 W |
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